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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF21045/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels measured over 3.84 MHz Bandwidth at f1 - 5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power -- 10 Watts Avg. Efficiency -- 23.5% Gain -- 15 dB IM3 -- - 37.5 dBc ACPR -- - 41 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Low Gold Plating Thickness on Leads, 40 Nominal. * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF21045LR3 MRF21045LSR3
2170 MHz, 45 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465E - 04, STYLE 1 NI - 400 MRF21045LR3
CASE 465F - 04, STYLE 1 NI - 400S MRF21045LSR3
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Test Conditions Human Body Model Machine Model Value 65 - 0.5, +15 105 0.60 - 65 to +150 200 Unit Vdc Vdc Watts W/C C C
ESD PROTECTION CHARACTERISTICS
Class 1 (Minimum) M2 (Minimum)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.65 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Rev. 9
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
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MRF21045LR3 MRF21045LSR3 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 3 -- -- -- 3.9 0.19 3 4 5 0.21 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
--
1.8
--
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA. Peak/Avg. ratio = 8.3 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz Bandwidth at f1 - 10 MHz and f2 +10 MHz.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz Bandwidth at f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 500 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. Gps 13.5 15 -- dB
21
23.5
--
%
IM3
--
- 37.5
- 35
dBc
ACPR
--
- 41
- 38
dBc
IRL
--
- 12
-9
dB
No Degradation In Output Power Before and After Test
MRF21045LR3 MRF21045LSR3 2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Symbol Gps Min -- Typ 14.9 Max -- Unit dB FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) -- continued
--
36
--
%
IMD
--
- 30
--
dBc
IRL
--
- 12
--
dB
Freescale Semiconductor, Inc...
Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz)
P1dB
--
50
--
W
MOTOROLA RF DEVICE DATA
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MRF21045LR3 MRF21045LSR3 3
Freescale Semiconductor, Inc.
VGG R1 + R2 C5 C4 C3 C2 C7 R3 B1 + C8 L1 C9 C10 VDD + C11 R4
Z5 RF INPUT
Z10 RF OUTPUT
Z1 C1
Z2
Z3
Z4 DUT
Z6
Z7
Z8 C6
Z9
Freescale Semiconductor, Inc...
Z1, Z9 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10
0.750 0.160 1.195 0.125 1.100 0.442 0.490 0.540 0.825
x 0.084 Transmission x 0.084 Transmission x 0.176 Transmission x 0.320 Transmission x 0.045 Transmission x 0.650 Transmission x 0.140 Transmission x 0.084 Transmission x 0.055 Transmission
Line Line Line Line Line Line Line Line Line
Board PCB
0.030 Glass Teflon, Keene GX - 0300 - 55 - 22, r = 2.55 Etched Circuit Boards MRF21045 Rev. 3, CMR
Figure 1. MRF21045LR3(LSR3) Test Circuit Schematic Table 1. MRF21045LR3(LSR3) Component Designations and Values
Designators B1 C1, C2, C6 C7 C3, C9 C4, C10 C5 C8 C11 L1 N1, N2 R1 R2 R3, R4 Description Short Ferrite Bead, Fair Rite, #2743019447 43 pF Chip Capacitors, ATC #100B430JCA500X 5.6 pF Chip Capacitor, ATC #100B5R6JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394 22 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394 1 Turn, #20 AWG, 0.100 ID, Motorola Type N Flange Mounts, Omni Spectra #3052 - 1648 - 10 1.0 k, 1/8 W Chip Resistor 180 k, 1/8 W Chip Resistor 10 , 1/8 W Chip Resistors
MRF21045LR3 MRF21045LSR3 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
C8 C7 R1 B1 R3 C2 L1 C10 R4 C9 R2 C5 C4 C3 C11 C6 WB1 WB2
C1
MRF21045
Freescale Semiconductor, Inc...
Figure 2. MRF21045LR3(LSR3) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MRF21045LR3 MRF21045LSR3 5
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 30 25 20 15 10 5 0 0.5 1 10 20 Pout, OUTPUT POWER (WATTS Avg.) W-CDMA VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) Gps -25 -30 -35 -40 -45 -50 ACPR -55 IM3 (dBc), ACPR (dBc) -25 -30 -35 -40 -45 3rd Order -50 5th Order -55 -60 -65 3 7th Order 4 6 8 10 VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 30 50 60 15 10 5 Pout, OUTPUT POWER (WATTS) PEP 20 45 40 , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 35 30 25
IM3
Freescale Semiconductor, Inc...
Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
-25 -30 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 28 26 24 22 20 18 16 14
Figure 4. Intermodulation Distortion Products versus Output Power
-10 IRL VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 500 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) -15 -20 -25 -30 IM3 ACPR Gps 2090 2110 2130 2150 2170 2190 -35 -40 -45
-35
IDQ = 300 mA 700 mA 600 mA
-40
-45
400 mA
500 mA -50 4 6 8 10
VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 30 50 60
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Figure 5. Intermodulation Distortion versus Output Power
15.5 Gps 15 G ps , POWER GAIN (dB) 14.5 14 13.5 13 12.5 2 4 6 8 10 30 50 60 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc IDQ = 500 mA f = 2170 MHz 10 35 0 34 24 50 , DRAIN EFFICIENCY (%) , DRAIN EFFICIENCY (%) 40 30 20 60 42 41 40
Figure 6. 2 - Carrier W - CDMA Broadband Performance
-24 -25 -26 IMD 39 38 37 36 IDQ = 500 mA Pout = 45 W (PEP) f1 = 2135 MHz, f2 = 2145 MHz 25 26 27 28 29 -27 -28 -29 -30 -31 -32 VDD, DRAIN SUPPLY (V)
Figure 7. CW Performance
Figure 8. Two - Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MOTOROLA RF DEVICE DATA
MRF21045LR3 MRF21045LSR3 6
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Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
G ps , POWER GAIN (dB),, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 16 G ps , POWER GAIN (dB) IDQ = 700 mA 600 mA 15 500 mA 40 35 30 25 20 IMD -35 Gps 2090 2110 2130 2150 2170 -40 2190 15 10 f, FREQUENCY (MHz) IRL VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 500 mA f1 = f - 5 MHz, f2 = f + 5 MHz -20 -25 -30 -10 -15
15.5
400 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 8 10 30 50 60
14.5 300 mA 14 4 6
Freescale Semiconductor, Inc...
Pout, OUTPUT POWER (WATTS) PEP
Figure 9. Two-Tone Power Gain versus Output Power
Figure 10. Two-Tone Broadband Performance
IMD, INTERMODULATION DISTORTION (dBc)
-25 -30 -35 -40 -45 -50 -55 0.1 1 Df, TONE SEPARATION (MHz) 10 30 7th Order 3rd Order VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 500 mA f1 = 2140 MHz - Df/2, f2 = 2140 MHz + Df/2 5th Order
0 -10 -20 -30 -40 -50 -60 -70 -20 -ACPR @ 3.84 MHz BW +ACPR @ 3.84 MHz BW f1 3.84 MHz BW f2 3.84 MHz BW
(dB)
-IM3 @ 3.84 MHz BW -15 -10 -5 0 5 10
+IM3 @ 3.84 MHz BW 15 20
f, FREQUENCY (MHz)
Figure 11. Intermodulation Distortion Products versus Two - Tone Spacing
Figure 12. 2-Carrier W-CDMA Spectrum
MOTOROLA RF DEVICE DATA
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MRF21045LR3 MRF21045LSR3 7
Freescale Semiconductor, Inc.
f = 2170 MHz Zload f = 2110 MHz
f = 2110 MHz
Zsource
f = 2170 MHz
Freescale Semiconductor, Inc...
Zo = 25
VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg. f MHz 2110 2140 2170 Zsource 18.88 - j8.86 19.80 - j9.93 19.68 - j10.44 Zload 3.11 - j4.18 3.09 - j3.87 3.12 - j3.72
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF21045LR3 MRF21045LSR3 8
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
NOTES
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MOTOROLA RF DEVICE DATA
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MRF21045LR3 MRF21045LSR3 9
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MRF21045LR3 MRF21045LSR3 10
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc
M M
Q
M
bbb B 3
TB
M
A
M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060.005 (1.520.13) RADIUS OR .06.005 (1.520.13) x 45 CHAMFER. INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC
B
TA
M
B
M
TA
M
B E
M
ccc C
M
TA
M
B
M
Freescale Semiconductor, Inc...
R (LID) F
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M
TA
M
B
M
M (INSULATOR) A
T
SEATING PLANE
S (INSULATOR) aaa
M
H B
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DIM A B C D E F G H K M N Q R S aaa bbb ccc
TA
M
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CASE 465E - 04 ISSUE E NI - 400 MRF21045LR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
2X D bbb M T A
1
M
B
M
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF
2
2X K ccc E TA B R C
3 (LID)
M
M
M
N
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M
TA
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(LID)
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(FLANGE)
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SEATING PLANE
H
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(INSULATOR)
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(FLANGE)
M
TA
M
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(INSULATOR)
B
B
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TA
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B
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STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465F - 04 ISSUE C NI - 400S MRF21045LSR3
MOTOROLA RF DEVICE DATA
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MRF21045LR3 MRF21045LSR3 11
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
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MRF21045LR3 MRF21045LSR3 12
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MOTOROLA RF DEVICE MRF21045/D DATA

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